
Manufacturer Part #
IRFBE30LPBF
Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262
Product Specification Section
Vishay IRFBE30LPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
05/20/2025 Details and Download
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
Active
Active
Vishay IRFBE30LPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 800V |
Drain-Source On Resistance-Max: | 3Ω |
Rated Power Dissipation: | 125|W |
Qg Gate Charge: | 78nC |
Package Style: | TO-262 (I2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
50
$1.25
200
$1.24
750
$1.22
2,000
$1.21
5,000+
$1.19
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-262 (I2PAK)
Mounting Method:
Surface Mount