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Manufacturer Part #

MJE200G

MJE Series 40 V 5 A NPN Complementary Silicon Plastic Power Transistor - TO-225

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2421
Product Specification Section
onsemi MJE200G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 40V
Collector Current Max: 5A
Power Dissipation-Tot: 1.5W
DC Current Gain-Min: 70
Package Style:  TO-225 (TO-126, SOT-32)
Mounting Method: Through Hole
Features & Applications

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

Features:

  • Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    • hFE = 70 (Min) @ IC = 500 mAdc
    • hFE = 45 (Min) @ IC = 2.0 Adc
    • hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    • VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product
    • fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage
    • ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
3000
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$855.00
USD
Quantity
Unit Price
1
$0.32
100
$0.315
300
$0.305
1,000
$0.30
3,000+
$0.285
Product Variant Information section