Manufacturer Part #
MJE200G
MJE Series 40 V 5 A NPN Complementary Silicon Plastic Power Transistor - TO-225
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Box Package Style:TO-225 (TO-126, SOT-32) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2421 | ||||||||||
Product Specification Section
onsemi MJE200G - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi MJE200G - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | Power Transistor |
| CE Voltage-Max: | 40V |
| Collector Current Max: | 5A |
| Power Dissipation-Tot: | 1.5W |
| DC Current Gain-Min: | 70 |
| Package Style: | TO-225 (TO-126, SOT-32) |
| Mounting Method: | Through Hole |
Features & Applications
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
Features:
- Collector-Emitter Sustaining Voltage
- VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain
- hFE = 70 (Min) @ IC = 500 mAdc
- hFE = 45 (Min) @ IC = 2.0 Adc
- hFE = 10 (Min) @ IC = 5.0 Adc
- Low Collector-Emitter Saturation Voltage
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
- VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product
- fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage
- ICBO = 100 nAdc @ Rated VCB
- Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
23 Weeks
Quantity
Unit Price
1
$0.32
100
$0.315
300
$0.305
1,000
$0.30
3,000+
$0.285
Product Variant Information section
Available Packaging
Package Qty:
500 per Box
Package Style:
TO-225 (TO-126, SOT-32)
Mounting Method:
Through Hole