Manufacturer Part #
MJE210G
MJE Series 40 V 5 A PNP Complementary Silicon Plastic Power Transistor - TO-225
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Bag Package Style:TO-225 (TO-126, SOT-32) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi MJE210G - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
onsemi MJE210G - Technical Attributes
Attributes Table
| Polarity: | PNP |
| Type: | Power Transistor |
| CE Voltage-Max: | 40V |
| Collector Current Max: | 5A |
| Power Dissipation-Tot: | 1.5W |
| DC Current Gain-Min: | 70 |
| Package Style: | TO-225 (TO-126, SOT-32) |
| Mounting Method: | Through Hole |
Features & Applications
The MJE210G is a Complementary Silicon Power Plastic Transistor with Collector−Emitter Voltage of 40 V, available in a TO-225 package.
Features:
- Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain:
- hFE = 70 (Min) @ IC = 500 mAdc
- hFE= 45 (Min) @ IC = 2.0 Adc
- hFE= 10 (Min) @ IC = 5.0 Adc
- Low Collector-Emitter Saturation Voltage -
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
- VCE(sat)= 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product -
- fT = 65 MHz (Min) @ IC
- fT = 100 mAdc
- Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
- Pb-Free Packages are Available
Applications:
- Audio amplifiers
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
500
$0.295
1,000
$0.29
2,000
$0.285
7,500+
$0.275
Product Variant Information section
Available Packaging
Package Qty:
500 per Bag
Package Style:
TO-225 (TO-126, SOT-32)
Mounting Method:
Through Hole