MJE210G in Bag by onsemi | Bipolar (BJT) Transistors | Future Electronics
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onsemi | MJE210G

Manufacturer Part #

MJE210G

MJE Series 40 V 5 A PNP Complementary Silicon Plastic Power Transistor - TO-225

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi MJE210G - Technical Attributes
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 40V
Collector Current Max: 5A
Power Dissipation-Tot: 1.5W
DC Current Gain-Min: 70
Package Style:  TO-225 (TO-126, SOT-32)
Mounting Method: Through Hole
Features & Applications

The MJE210G is a Complementary Silicon Power Plastic Transistor with Collector−Emitter Voltage of 40 V, available in a TO-225 package.

Features:

  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain:
    • hFE = 70 (Min) @ IC = 500 mAdc
    • hFE= 45 (Min) @ IC = 2.0 Adc
    • hFE= 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    • VCE(sat)= 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product -
    • fT = 65 MHz (Min) @ IC
    • fT = 100 mAdc
  • Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available

Applications:

  • Audio amplifiers
Read More...
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3500
Multiple Of:
500
Total
$997.50
USD
Quantity
Unit Price
500
$0.295
1,000
$0.29
2,000
$0.285
7,500+
$0.275
Product Variant Information section