IRFB3077PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFB3077PBF

Manufacturer Part #

IRFB3077PBF

Single N-Channel 75 V 3.3 mOhm 220 nC 3HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFB3077PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 370W
Qg Gate Charge: 220nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 210A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 69ns
Rise Time: 87ns
Fall Time: 95ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 9400pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$78.50
USD
Quantity
Unit Price
50
$1.57
150
$1.55
500
$1.52
1,000
$1.51
2,000+
$1.49
Product Variant Information section