
Manufacturer Part #
BSC067N06LS3GATMA1
Single N-Channel 60 V 12.1 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8
Product Specification Section
Infineon BSC067N06LS3GATMA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon BSC067N06LS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 12.1mΩ |
Rated Power Dissipation: | 69W |
Qg Gate Charge: | 30nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 50A |
Turn-on Delay Time: | 15ns |
Turn-off Delay Time: | 37ns |
Rise Time: | 26ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.2V |
Technology: | OptiMOS |
Height - Max: | 1.1mm |
Length: | 5.49mm |
Input Capacitance: | 3800pF |
Package Style: | TDSON-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
5,000+
$0.43
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Package Style:
TDSON-8
Mounting Method:
Surface Mount