BSC067N06LS3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

BSC067N06LS3GATMA1

Single N-Channel 60 V 12.1 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2432
Product Specification Section
Infineon BSC067N06LS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 12.1mΩ
Rated Power Dissipation: 69W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 37ns
Rise Time: 26ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.49mm
Input Capacitance: 3800pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,150.00
USD
Quantity
Unit Price
5,000+
$0.43
Product Variant Information section