
Manufacturer Part #
IPB014N06NATMA1
Single N-Channel 60 V 1.4 mOhm 106 nC OptiMOS™ Power Mosfet - D2PAK-7
Product Specification Section
Infineon IPB014N06NATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IPB014N06NATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 1.4mΩ |
Rated Power Dissipation: | 3W |
Qg Gate Charge: | 106nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 34A |
Turn-on Delay Time: | 22ns |
Turn-off Delay Time: | 47ns |
Rise Time: | 18ns |
Fall Time: | 14ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.8V |
Technology: | OptiMOS |
Input Capacitance: | 7800pF |
Package Style: | TO-263-7 (D2PAK7) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
13,000
USA:
13,000
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1,000
$1.54
2,000+
$1.52
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount