IRFP4768PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFP4768PBF

Manufacturer Part #

IRFP4768PBF

Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2301
Product Specification Section
Infineon IRFP4768PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 1.75mΩ
Rated Power Dissipation: 520W
Qg Gate Charge: 180nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 93A
Turn-on Delay Time: 36ns
Turn-off Delay Time: 57ns
Rise Time: 160ns
Fall Time: 110ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Input Capacitance: 10880pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
20
USA:
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.89
USD
Quantity
Unit Price
1
$1.89
40
$1.86
150
$1.84
500
$1.82
2,000+
$1.76
Product Variant Information section