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Infineon Technologies | IPA086N10N3GXKSA1

Manufacturer Part #

IPA086N10N3GXKSA1

Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS™ Power Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IPA086N10N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 8.6mΩ
Rated Power Dissipation: 37.5|W
Qg Gate Charge: 42nC
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$497.50
USD
Quantity
Unit Price
500
$0.995
1,000
$0.98
2,000
$0.97
2,500
$0.965
7,500+
$0.94
Product Variant Information section