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Infineon | IPN80R1K4P7ATMA1

Manufacturer Part #

IPN80R1K4P7ATMA1

Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN80R1K4P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 7W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 8ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 250pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,080.00
USD
Quantity
Unit Price
3,000
$0.36
6,000
$0.355
15,000+
$0.345
Product Variant Information section