
Manufacturer Part #
IPN80R1K4P7ATMA1
Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - SOT-223
Product Specification Section
Infineon IPN80R1K4P7ATMA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IPN80R1K4P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 800V |
Drain-Source On Resistance-Max: | 1.4Ω |
Rated Power Dissipation: | 7W |
Qg Gate Charge: | 10nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 4A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 40ns |
Rise Time: | 8ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | CoolMOS |
Input Capacitance: | 250pF |
Package Style: | SOT-223 (TO-261-4, SC-73) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
3,000
$0.31
9,000
$0.305
15,000+
$0.30
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount