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Infineon | IPN80R1K4P7ATMA1

Codice produttore

IPN80R1K4P7ATMA1

Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - SOT-223

Modello ECAD:
Fabbricante: Infineon
Confezione Standard:
Product Variant Information section
Codice data:
Product Specification Section
Infineon IPN80R1K4P7ATMA1 - Caratteristiche Tecniche
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 7W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 8ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 250pF
Tipologia confezione:  SOT-223 (TO-261-4, SC-73)
Metodo di montaggio: Surface Mount
Pricing Section
Stock globale:
0
Germania:
0
In ordine:
0
Stock in fabbrica:Stock in fabbrica:
0
Lead Time del produttore:
19 Weeks
Ordine minimo:
3000
Multiplo di:
3000
Totale
990,00 $
USD
Quantità
Prezzo unitario
3.000
0,33 $
9.000
0,325 $
12.000+
0,32 $
Product Variant Information section