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Manufacturer Part #
FQP11N40C
N-Channel 400 V 530 mOhm 35 nC Flange Mount Mosfet - TO-220
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | 2525 | ||||||||||
onsemi FQP11N40C - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FQP11N40C&field4=onsemi&field18=https://p1na.futureelectronics.com/p/6000934
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FQP11N40C&field4=onsemi&field18=https://p1na.futureelectronics.com/p/6000934
onsemi FQP11N40C - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 400V |
| Drain-Source On Resistance-Max: | 530mΩ |
| Rated Power Dissipation: | 135|W |
| Qg Gate Charge: | 35nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The FQP11N40C is a 400 V 530 mΩ N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology
The advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features:
- 10.5 A, 400 V, RDS(on) = 0.5 Ω @VGS = 10 V
- Low gate charge ( typical 28 nC)
- Low Crss ( typical 85 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications:
- High efficiency S.M.P.S
- Electronic lamp ballasts
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount