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Infineon | IPB60R080P7ATMA1

Manufacturer Part #

IPB60R080P7ATMA1

Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB60R080P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 129W
Qg Gate Charge: 51nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 37A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 70ns
Rise Time: 10ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 2180pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,070.00
USD
Quantity
Unit Price
1,000
$2.07
2,000
$2.06
3,000
$2.05
4,000+
$2.04
Product Variant Information section