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Manufacturer Part #
NVH4L160N120SC1
N-Channel 1200 V 17.3 A 111 W Through Hole Silicon Carbide MOSFET - TO-247-4L
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:450 per Tube Package Style:TO-247-4L Mounting Method:Through Hole |
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| Date Code: | 2326 | ||||||||||
Product Specification Section
onsemi NVH4L160N120SC1 - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
China
HTS Code:
8541.29.00.55
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi NVH4L160N120SC1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 17.3A |
| Input Capacitance: | 665pF |
| Power Dissipation: | 111W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-247-4L |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
450
$6.76
900+
$6.71
Product Variant Information section
Available Packaging
Package Qty:
450 per Tube
Package Style:
TO-247-4L
Mounting Method:
Through Hole