IRF1010EZPBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF1010EZPBF

Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2324
Product Specification Section
Infineon IRF1010EZPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8.5mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 86nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 84A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 38ns
Rise Time: 90ns
Fall Time: 54ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 2810pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Specifically designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

The IRF1010EZPBF is a single N-channel MOSFET in a TO-220 package.  This is a lead free device as indicated by the PBF, and comes in a tube.
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Pricing Section
Global Stock:
4,050
USA:
4,050
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$27.25
USD
Quantity
Unit Price
50
$0.545
200
$0.53
750
$0.515
2,000
$0.505
5,000+
$0.49
Product Variant Information section