
Manufacturer Part #
IRF1010EZPBF
Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3
Product Specification Section
Infineon IRF1010EZPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Labeling Change
09/19/2024 Details and Download
Multiple Material Change
12/18/2023 Details and Download
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Active
Active
Infineon IRF1010EZPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 8.5mΩ |
Rated Power Dissipation: | 140W |
Qg Gate Charge: | 86nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 84A |
Turn-on Delay Time: | 19ns |
Turn-off Delay Time: | 38ns |
Rise Time: | 90ns |
Fall Time: | 54ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 9.02mm |
Length: | 10.67mm |
Input Capacitance: | 2810pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Features & Applications
Pricing Section
Global Stock:
4,050
USA:
4,050
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
50
$0.545
200
$0.53
750
$0.515
2,000
$0.505
5,000+
$0.49
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole