NXH35C120L2C2S1G in Tube by onsemi | IGBTs | Future Electronics
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onsemi | NXH35C120L2C2S1G

Manufacturer Part #

NXH35C120L2C2S1G

NXH35C120L2C Series1200 V 35 A Through Hole Power Module IGBT - DIP-26

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2121
Product Specification Section
onsemi NXH35C120L2C2S1G - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 35A
Power Dissipation-Tot: 20mW
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 105A
Collector - Emitter Saturation Voltage: 1.8V
Turn-on Delay Time: 104ns
Turn-off Delay Time: 277ns
Qg Gate Charge: 360nC
Reverse Recovery Time-Max: 224ns
Leakage Current: 400nA
Input Capacitance: 8333pF
Thermal Resistance: 0.57°C/W
Operating Temp Range: -40°C to +150°C
Package Style:  DIP-26
Mounting Method: Through Hole
Pricing Section
Global Stock:
18
USA:
18
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
6
Multiple Of:
6
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$216.72
USD
Quantity
Unit Price
6
$36.12
18
$35.74
24
$35.64
60
$35.32
90+
$35.00
Product Variant Information section