IRFP3306PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFP3306PBF

Manufacturer Part #

IRFP3306PBF

Single N-Channel 60 V 4.2 mOhm 120 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFP3306PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 220W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 160A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 40ns
Rise Time: 76ns
Fall Time: 77ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 20.7mm
Length: 15.87mm
Input Capacitance: 4520pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
25
Multiple Of:
25
Total
$32.75
USD
Quantity
Unit Price
25
$1.31
100
$1.29
375
$1.27
1,000
$1.26
2,500+
$1.24
Product Variant Information section