AIMW120R045M1XKSA1 in Tube by Infineon | Silicon Carbide MOSFETs (SiC MOSFETs) | Future Electronics
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Manufacturer Part #

AIMW120R045M1XKSA1

AIMW120R045M1 Series 1200 V 52 A CoolSiC™ SiC Trench Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2351
Product Specification Section
Infineon AIMW120R045M1XKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 52A
Input Capacitance: 2130pF
Power Dissipation: 228W
Operating Temp Range: -40°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$14.20
USD
Quantity
Unit Price
1
$14.20
5
$14.02
25
$13.84
50
$13.76
150+
$13.53
Product Variant Information section