PMV65XP,215 in Reel by Nexperia | Mosfets | Future Electronics
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Manufacturer Part #

PMV65XP,215

P-Channel 20 V 833 mW 7.7 nC Surface Mount TrenchMOS FET - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2421
Product Specification Section
Nexperia PMV65XP,215 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 74mΩ
Rated Power Dissipation: 480mW
Qg Gate Charge: 7.7nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 2.8A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 135ns
Rise Time: 18ns
Fall Time: 68ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.65V
Technology: Si
Input Capacitance: 744pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.

Features:

  • Low threshold voltage
  • Low on-state resistance

Applications:

  • Low power DC-to-DC converters
  • Battery management
  • Load switching
  • Battery powered portable equipment
Read More...
Pricing Section
Global Stock:
102,000
USA:
102,000
42,000
Factory Stock:Factory Stock:
-1
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$135.60
USD
Quantity
Unit Price
3,000
$0.0452
9,000
$0.0441
15,000
$0.0436
30,000
$0.0429
60,000+
$0.0418
Product Variant Information section