Name: Infineon IRF530NPBF
Brand: Infineon
SKU: 7678832
Price: 0.305 USD
Availability: InStock

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refer to technical specifications

Manufacturer Part #

IRF530NPBF

Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3

IRF530NPBF Datasheet
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Mfr. Name:	Infineon
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 50 per Tube Package Style: TO-220-3 (TO-220AB)
Date Code:	2313

Infineon IRF530NPBF - Technical Attributes

Fet Type:	N-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	90mΩ
Rated Power Dissipation:	70W
Qg Gate Charge:	37nC
Gate-Source Voltage-Max [Vgss]:	20V
Drain Current:	17A
Turn-on Delay Time:	9.2ns
Turn-off Delay Time:	35ns
Rise Time:	22ns
Fall Time:	25ns
Operating Temp Range:	-55°C to +175°C
Gate Source Threshold:	4V
Technology:	Advanced Process Technology
Height - Max:	8.77mm
Length:	10.54mm
Input Capacitance:	920pF
Package Style:	TO-220-3 (TO-220AB)

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Features & Applications

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRF530NPBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.