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Manufacturer Part #

DMP6110SSS-13

P-Channel 60 V 4.5 A 110 mΩ 19.4 nC Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2141
Product Specification Section
Diodes Incorporated DMP6110SSS-13 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 110mΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 9.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -4.5A
Turn-on Delay Time: 3.7ns
Turn-off Delay Time: 58.7ns
Rise Time: 6.3ns
Fall Time: 26.1ns
Operating Temp Range: -55°C to +150°C
Input Capacitance: 1030pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
43 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,125.00
USD
Quantity
Web Price
2,500
$1.01
5,000
$0.825
7,500
$0.815
10,000+
$0.81
Product Variant Information section