ZXMN10B08E6TA in Reel by Diodes Incorporated | Mosfets | Future Electronics
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Manufacturer Part #

ZXMN10B08E6TA

ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated ZXMN10B08E6TA - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.23Ω
Rated Power Dissipation: 1.1|W
Package Style:  SOT-23-6 (SOT-26)
Mounting Method: Surface Mount
Features & Applications

The ZXMN10B08E6TA is a N-Channel 100 V enhancement mode MOSFET with Fast Switching Speed.

Features:

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23-6 package

Applications:

  • DC-DC Converters
  • Power Management functions
  • Motor control
  • Disconnect switches
Read More...
Pricing Section
Global Stock:
0
USA:
0
39,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$765.00
USD
Quantity
Unit Price
3,000
$0.255
6,000+
$0.25
Product Variant Information section