Manufacturer Part #
IPB60R120P7ATMA1
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK
Product Specification Section
Infineon IPB60R120P7ATMA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IPB60R120P7ATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.12Ω |
| Rated Power Dissipation: | 95W |
| Qg Gate Charge: | 36nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 26A |
| Turn-on Delay Time: | 21ns |
| Turn-off Delay Time: | 81ns |
| Rise Time: | 14ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.5V |
| Technology: | CoolMOS |
| Input Capacitance: | 1544pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
1,000
$2.24
2,000
$2.22
3,000+
$2.20
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount