IPB60R120P7ATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPB60R120P7ATMA1

Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB60R120P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.12Ω
Rated Power Dissipation: 95W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 26A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 81ns
Rise Time: 14ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1544pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,240.00
USD
Quantity
Unit Price
1,000
$2.24
2,000
$2.22
3,000+
$2.20
Product Variant Information section