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Manufacturer Part #
IRFU120NPBF
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:75 per Tube Package Style:IPAK Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Infineon IRFU120NPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Reprocessed previous announcement issued under Future PCN 96119, to update system for replacements.Detailed change information:Subject Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#).Reason :To Reflect the Correct Environmental Flag at Production Sites for Each Product.
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFU120NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/8115149
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFU120NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/8115149
Infineon IRFU120NPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.21Ω |
| Rated Power Dissipation: | 48W |
| Qg Gate Charge: | 25nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.4A |
| Turn-on Delay Time: | 4.5ns |
| Turn-off Delay Time: | 32ns |
| Rise Time: | 23ns |
| Fall Time: | 23ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 330pF |
| Package Style: | IPAK |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
75 per Tube
Package Style:
IPAK
Mounting Method:
Through Hole