
Manufacturer Part #
IRF9610PBF-BE3
-200V, -1.8A, 3ohm, Power MOSFET, P-Channel, TO-220
Product Specification Section
Vishay IRF9610PBF-BE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
05/20/2025 Details and Download
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
Active
Active
Vishay IRF9610PBF-BE3 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 3Ω |
Rated Power Dissipation: | 20W |
Qg Gate Charge: | 11nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 1.8A |
Turn-on Delay Time: | 8ns |
Turn-off Delay Time: | 10ns |
Rise Time: | 15ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Input Capacitance: | 170pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
1
$0.675
50
$0.66
200
$0.645
750
$0.625
2,500+
$0.595
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole