BSZ110N06NS3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Infineon | BSZ110N06NS3GATMA1

Manufacturer Part #

BSZ110N06NS3GATMA1

Single N-Channel 60 V 11 mOhm 25 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2517
Product Specification Section
Infineon BSZ110N06NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 2.1|W
Qg Gate Charge: 25nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,125.00
USD
Quantity
Unit Price
5,000
$0.225
10,000
$0.22
15,000+
$0.215
Product Variant Information section