BSC010NE2LSATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Infineon | BSC010NE2LSATMA1

Manufacturer Part #

BSC010NE2LSATMA1

Single N-Channel 25 V 96 W 85 nC OptiMOS Surface Mount Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2452
Product Specification Section
Infineon BSC010NE2LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.3mΩ
Rated Power Dissipation: 96W
Qg Gate Charge: 85nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 6.7ns
Turn-off Delay Time: 34ns
Rise Time: 6ns
Fall Time: 4.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.35mm
Input Capacitance: 4700pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
25,000
USA:
25,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,175.00
USD
Quantity
Unit Price
5,000+
$0.435
Product Variant Information section