
Manufacturer Part #
BSC057N08NS3GATMA1
Single N-Channel 80 V 11 mOhm 56 nC OptiMOS™ Power Mosfet - TDSON-8
Product Specification Section
Infineon BSC057N08NS3GATMA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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Infineon BSC057N08NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 11mΩ |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 56nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 16A |
Turn-on Delay Time: | 16ns |
Turn-off Delay Time: | 32ns |
Rise Time: | 14ns |
Fall Time: | 9ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3.5V |
Technology: | OptiMOS |
Height - Max: | 1.1mm |
Length: | 5.35mm |
Input Capacitance: | 2900pF |
Package Style: | TDSON-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
20,000
USA:
20,000
Factory Lead Time:
16 Weeks
Quantity
Unit Price
5,000+
$0.62
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Package Style:
TDSON-8
Mounting Method:
Surface Mount