PBSS4160V,115 in Reel by Nexperia | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

PBSS4160V,115

PBSS4160V Series 60 V 1 A 0.5 W SMT NPN Low VCEsat (BISS) Transistor - SOT-666

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
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Product Specification Section
Nexperia PBSS4160V,115 - Technical Attributes
Attributes Table
Product Status: Not For Automotive Designs
Polarity: NPN
CE Voltage-Max: 60V
Collector Current Max: 1A
Power Dissipation-Tot: 500mW
Collector - Base Voltage: 80V
Collector - Emitter Saturation Voltage: 90mV
Emitter - Base Voltage: 5V
DC Current Gain-Min: 250
Collector - Current Cutoff: 100nA
Configuration: Dual
Frequency - Transition: 220MHz
Operating Temp Range: -65°C to +150°C
Moisture Sensitivity Level: 1
Package Style:  SOT-666
Mounting Method: Surface Mount
Features & Applications
If your design has to keep power consumption and heat dissipation to a minimum, then NXP's low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
8 Weeks
Minimum Order:
12000
Multiple Of:
4000
Total
$842.40
USD
Quantity
Unit Price
4,000
$0.0722
8,000
$0.0709
12,000
$0.0702
16,000
$0.0697
20,000+
$0.0682
Product Variant Information section