DMT6016LSS-13 in Reel by Diodes Incorporated | Mosfets | Future Electronics
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Manufacturer Part #

DMT6016LSS-13

DMT6016 Series 60 V 9.2 A 18 mOhm N-Channel Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2302
Product Specification Section
Diodes Incorporated DMT6016LSS-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 1.5|W
Qg Gate Charge: 17nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
20,000
USA:
20,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$447.50
USD
Quantity
Unit Price
2,500
$0.179
5,000
$0.177
7,500
$0.175
10,000+
$0.173
Product Variant Information section