IRF7303TRPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF7303TRPBF

Dual N-Channel 30V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
Infineon IRF7303TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.9A
Turn-on Delay Time: 6.8ns
Turn-off Delay Time: 22ns
Rise Time: 21ns
Fall Time: 7.7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Generation V
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 520pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
8,000
USA:
8,000
4,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,200.00
USD
Quantity
Unit Price
4,000
$0.30
8,000
$0.295
12,000+
$0.29
Product Variant Information section