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Infineon | IRF2804PBF

Manufacturer Part #

IRF2804PBF

Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2444
Product Specification Section
Infineon IRF2804PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.3mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 240nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 270A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 130ns
Rise Time: 120ns
Fall Time: 130ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 6450pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

The IRF2804PBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

Pricing Section
Global Stock:
64
USA:
64
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
14
Multiple Of:
50
Total
$14.42
USD
Quantity
Unit Price
50
$1.03
200
$1.01
750
$0.975
2,000
$0.955
5,000+
$0.925
Product Variant Information section