Microchip | MIC44F20YML-TR

An IGBT has the output switching and conduction characteristics of a bipolar transistor but is voltage-controlled like a MOSFET. In general, this means it has the advantages of high-current handling capability of a bipolar with the ease of control of a MOSFET. The IGBT still has the disadvantages of a comparatively large current tail and no body drain diode.

The MOSFET is a device that is voltage- and not current-controlled. MOSFETs have a positive temperature coefficient, stopping thermal runaway. The on-state-resistance has no theoretical limit, hence on-state losses can be far lower. The MOSFET also has a body-drain diode, which is particularly useful in dealing with limited free wheeling currents.

Fabricated using Micrel’s proprietary BiCMOS/DMOS process for low power consumption and high efficiency, the MIC44F20 translates TTL or CMOS input logic levels to output voltage levels that swing within 25mV of the positive supply or ground. Comparable bipolar devices are capable of swinging only to within 1V of the supply.

The input supply voltage range of the MIC44F20 is 4.5V to 13.2V, making the devices suitable for driving MOSFETs in a wide range of power applications. Other features include an enable function, latch-up protection, and a programmable UVLO function.

The MIC44F20 has a junction temperature range of –40 °C to +125 °C with exposed pad ePAD MSOP-8 and 2x2 MLF™-8 package options.

The MIC44F20YML TR is a 6A high speed non-inverting MOSFET driver that comes in a 2mm x 2mm MLF™-8 package.