Manufacturer Part #
MJD200T4G
MJD Series 25 V Tab Mount NPN Complementary Plastic Power Transistor TO-252-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) |
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| Date Code: | 2527 | ||||||||||
Product Specification Section
onsemi MJD200T4G - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | Power Transistor |
| CE Voltage-Max: | 25V |
| Collector Current Max: | 5A |
| Power Dissipation-Tot: | 1.4W |
| DC Current Gain-Min: | 70 |
| Package Style: | TO-252-3 (DPAK) |
Features & Applications
The MJD200T4G is a Complementary Plastic Power Transistor, Available in a TO-252 package.
Features:
- Collector−Emitter Sustaining Voltage:
- VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain:
- hFE = 70 (Min) @ IC = 500 mAdc
- hFE = 45 (Min) @ IC = 2 Adc
- hFE = 10 (Min) @ IC = 5 Adc
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Low Collector−Emitter Saturation Voltage −
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
- VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current−Gain − Bandwidth Product:
- fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage:
- ICBO = 100 nAdc @ Rated VCB
- Epoxy Meets UL 94 V−0 @ 0.125 in
- ESD Ratings:
- Human Body Model, 3B > 8000 V
- Machine Model, C > 400 V
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These are Pb−Free Packages
Applications:
- Audio Amplifiers
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Lead Time:
27 Weeks
Quantity
Unit Price
2,500
$0.26
5,000+
$0.255
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)