text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. IGBTs
  6. FF200R12KT4HOSA1

Infineon | FF200R12KT4HOSA1

Manufacturer Part #

FF200R12KT4HOSA1

FF200R12KT4 Series 1200 V 320 A 1100 W Chassis Mount IGBT Module

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2545
Product Specification Section
Infineon FF200R12KT4HOSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 320A
Power Dissipation-Tot: 1100W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 400A
Collector - Emitter Saturation Voltage: 1.75V
Turn-on Delay Time: 0.16µs
Turn-off Delay Time: 0.45µs
Qg Gate Charge: 1800nC
Leakage Current: 400nA
Input Capacitance: 14nF
Operating Temp Range: -40°C to +150°C
No of Terminals: 7
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
30
USA:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
10
Multiple Of:
10
Total
$816.40
USD
Quantity
Unit Price
10
$81.64
20
$81.09
30
$80.77
50
$80.37
100+
$79.52
Product Variant Information section