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onsemi | 2N7000

Hersteller Artikelnummer

2N7000

N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92-3

ECAD Modell:
Herstellername: onsemi
Standard Verpackungsart:
Product Variant Information section
Datencode: 2525
Product Specification Section
onsemi 2N7000 - Technische Eigenschaften
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5Ω
Rated Power Dissipation: 400|mW
Paketstil:  TO-92
Montagemethode: Through Hole
Merkmale und Anwendungen

The 2N7000 is a 60 V, 5 Ω N-Channel Enhancement Mode Field Effect Transistor produced using high cell density DMOS technology.

This product have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A.

Features:

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Applications:

  • Servo motor control
  • Switching applications
Pricing Section
Weltweiter Lagerbestand:
7.000
Deutschland:
7.000
In Bestellung:Order inventroy details
50.000
Herstellerlagerbestand:Herstellerlagerbestand:
0
Standard-Hersteller-Lieferzeit:
19 Wochen
Mindestbestellmenge:
1
Verpackungseinheit:
1
Summe
0,12 $
USD
Menge
Internetpreis
1
0,12 $
250
0,118 $
750
0,115 $
2.500
0,113 $
7.500+
0,108 $
Product Variant Information section