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Infineon | BSC059N04LSGATMA1

Manufacturer Part #

BSC059N04LSGATMA1

Single N-Channel 40 V 5.9 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC059N04LSGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 5.9mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 30nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,375.00
USD
Quantity
Unit Price
5,000
$0.275
15,000
$0.27
25,000+
$0.265
Product Variant Information section