text.skipToContent text.skipToNavigation

Manufacturer Part #

BSZ018NE2LSATMA1

Single N-Channel 25 V 1.8 mOhm 39 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon BSZ018NE2LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.8mΩ
Rated Power Dissipation: 2.1|W
Qg Gate Charge: 39nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$2,225.00
USD
Quantity
Unit Price
5,000
$0.445
10,000
$0.44
15,000+
$0.435