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Diodes Incorporated | DMG3415UFY4Q-7

Manufacturer Part #

DMG3415UFY4Q-7

DMG3415UFY4Q Series 16 V 2.5 A P-Channel Enhancement Mode Mosfet - DFN2015

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG3415UFY4Q-7 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 16V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 0.65W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 2.5A
Turn-on Delay Time: 79ns
Turn-off Delay Time: 885ns
Rise Time: 175ns
Fall Time: 568ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.55V
Input Capacitance: 282pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
1,602,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
9000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,215.00
USD
Quantity
Unit Price
3,000
$0.138
9,000
$0.135
30,000
$0.133
45,000+
$0.131
Product Variant Information section