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Diodes Incorporated | DMN10H220L-13

Manufacturer Part #

DMN10H220L-13

Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN10H220L-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 250mΩ
Rated Power Dissipation: 1.3W
Qg Gate Charge: 4.1nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 1.6A
Turn-on Delay Time: 6.8ns
Turn-off Delay Time: 7.9ns
Rise Time: 8.2ns
Fall Time: 3.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 1.1mm
Length: 3mm
Input Capacitance: 401pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$779.00
USD
Quantity
Unit Price
10,000
$0.0779
20,000
$0.0766
30,000
$0.0759
40,000
$0.0754
50,000+
$0.0739
Product Variant Information section