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Diodes Incorporated | DMN53D0LDW-7

Manufacturer Part #

DMN53D0LDW-7

Dual N-Channel 50 V 310 mW 0.6 nC Silicon Surface Mount Mosfet - SOT-363

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2442
Product Specification Section
Diodes Incorporated DMN53D0LDW-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 50V
Drain-Source On Resistance-Max: 4.5Ω
Rated Power Dissipation: 310mW
Qg Gate Charge: 0.6nC
Gate-Source Voltage-Max [Vgss]: 1.5V
Drain Current: 360mA
Turn-on Delay Time: 2.7ns
Turn-off Delay Time: 19ns
Rise Time: 2.5ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: Si
Height - Max: 1mm
Length: 2.2mm
Input Capacitance: 46pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$240.00
USD
Quantity
Unit Price
3,000
$0.04
12,000
$0.0389
30,000
$0.0382
75,000
$0.0374
120,000+
$0.0364
Product Variant Information section