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Manufacturer Part #

DMN6066SSD-13

DMN6066SSD Series 60 V 66 mOhm Dual N-Channel Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN6066SSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 66mΩ
Rated Power Dissipation: 1.8|W
Qg Gate Charge: 10.3nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The DMN6066SSD-13 is a part of DMN6066SSD Series 60V 66 mOhm Dual N-Channel Enhancement Mode Mosfet. It is available in SOIC-8 Package.

The DMN6066SSD-13 MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features:

  • Low on-resistance
  • Fast switching speed
  • 100% Unclamped Inductive Switch (UIS) test in production
  • “Green” component and RoHS compliant (Note 1)
  • Qualified to AEC-Q101 Standards for High Reliability

Applications:

  • Motor control
  • Backlighting
  • DC-DC Converters
  • Power management functions
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
55,000
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$457.50
USD
Quantity
Unit Price
2,500
$0.183
7,500
$0.18
10,000
$0.179
25,000
$0.176
37,500+
$0.174
Product Variant Information section