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Diodes Incorporated | DMT10H010LK3-13

Manufacturer Part #

DMT10H010LK3-13

N-Channel 100 V 68.8 A 3 W Enhancement Mode Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2519
Product Specification Section
Diodes Incorporated DMT10H010LK3-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 8.8mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 53.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 68.8A
Turn-on Delay Time: 11.6ns
Turn-off Delay Time: 42.9ns
Rise Time: 14.1ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Input Capacitance: 2592pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
17,500
USA:
17,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,375.00
USD
Quantity
Unit Price
2,500
$0.55
5,000
$0.54
7,500
$0.535
12,500+
$0.525
Product Variant Information section