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Manufacturer Part #

FDN337N

N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2050
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.065Ω
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN337N is a 30 V 65 mΩ SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using  high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and  other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package

Features:

  • 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V, RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
  • Industry standard outline SOT-23 surface mount package
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability

Applications:

  • Load switch
  • Battery protection
  • Power management
Pricing Section
Global Stock:
1,290,000
Germany (Online Only):
1,290,000
1,077,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,185.00
USD
Quantity
Web Price
3,000+
$0.395
Product Variant Information section