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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 216,000

On Order:Order inventroy details 639,000
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 3,000
Multiple Of: 3,000
Quantity Web Price
3,000 $0.103
9,000 $0.086
15,000 $0.085
30,000 $0.084
60,000+ $0.083
Total:

$309.00

USD
Attributes
Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 0.065Ω
Rated Power Dissipation 0.5|W
Features and Applications

The FDN337N is a 30 V 65 mΩ SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using  high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and  other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package

Features:

  • 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V, RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
  • Industry standard outline SOT-23 surface mount package
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability

Applications:

  • Load switch
  • Battery protection
  • Power management