|Drain-to-Source Voltage [Vdss]||30V|
|Drain-Source On Resistance-Max||0.065Ω|
|Rated Power Dissipation||0.5|W|
Features and Applications
The FDN337N is a 30 V 65 mΩ SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package
- 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V, RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
- Industry standard outline SOT-23 surface mount package
- High density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability
- Load switch
- Battery protection
- Power management