Référence fabricant
FDN337N
N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SSOT-3 Méthode de montage :Surface Mount |
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| Code de date: | 2429 | ||||||||||
onsemi FDN337N - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
onsemi FDN337N - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.065Ω |
| Rated Power Dissipation: | 0.5|W |
| Style d'emballage : | SSOT-3 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FDN337N is a 30 V 65 mΩ SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package
Features:
- 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V, RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
- Industry standard outline SOT-23 surface mount package
- High density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability
Applications:
- Load switch
- Battery protection
- Power management
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SSOT-3
Méthode de montage :
Surface Mount