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Manufacturer Part #

FDS6673BZ

Single P-Channel -30 V 2.5 W 65 nC PowerTrench Surface Mount Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS6673BZ - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 65nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: -14.5A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 225ns
Rise Time: 16ns
Fall Time: 105ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V
Technology: PowerTrench
Height - Max: 1.75mm
Length: 4.9mm
Input Capacitance: 3500pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6673BZ is a 30 V 7.8 mΩ P-Channel MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

Features:

  • Max rDS(on) = 7.8 mΩ, VGS = -10 V, ID = -14.5 A
  • Max rDS(on) = 12 mΩ, VGS = -4.5 V, ID = -12 A
  • Extended VGS range (-25 V) for battery applications
  • HBM ESD protection level of 6.5 kV typical (note 3)
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handling capability
  • RoHS compliant 

Applications:

  • Power Management  
  • Load switching applications
  • Notebook Computers
  • Portable Battery Packsd
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Global Stock:
0
USA:
0
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,200.00
USD
Quantity
Unit Price
2,500
$0.48
5,000
$0.47
10,000
$0.465
12,500+
$0.46
Product Variant Information section