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onsemi | FDT457N

Manufacturer Part #

FDT457N

N-Channel 30 V 0.06 Ohm Enhancement Mode Field Effect Transistor-SOT-223

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2606
Product Specification Section
onsemi FDT457N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 5.9nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications
The FDT457N is a 30 V 0.06 Ohm N-Channel enhancement mode power field effect transistor.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance

Features:

  • 5 A, 30 V.
  • RDS(ON) = 0.06 Ω @ VGS = 10 V
  • RDS(ON) = 0.090 Ω @ VGS = 4.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

Applications:

  • Notebook computer
  • Power management,
  • Battery powered circuits
  • DC motor control
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,960.00
USD
Quantity
Unit Price
4,000
$0.49
8,000
$0.485
12,000
$0.48
16,000+
$0.475
Product Variant Information section