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Manufacturer Part #

FQD11P06TM

P-Channel 60 V 0.185 Ohm Surface Mount Mosfet - TO-252-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2026
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.185Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 13nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD11P06TM is a 60 V 0.185 Ω P-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. 

Features:

  • -9.4 A, -60 V, RDS(on) = 0.185 Ω @VGS = -10 V
  • Low gate charge (typical 13nC)
  • Low Crss (typical 45pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply,
  • Motor control
  • Audio amplifier
  • DC-AC converters
Pricing Section
Stock:
2,500
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$662.50
USD
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Quantity
Web Price
2,500
$0.265
5,000
$0.25
7,500
$0.24
10,000
$0.225
12,500+
$0.215