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onsemi | FQD11P06TM

Manufacturer Part #

FQD11P06TM

P-Channel 60 V 0.185 Ohm Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2524
Product Specification Section
onsemi FQD11P06TM - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.185Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 9.4A
Turn-on Delay Time: 6.5ns
Turn-off Delay Time: 15ns
Rise Time: 40ns
Fall Time: 45ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 420pF
Series: QFET
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD11P06TM is a 60 V 0.185 Ω P-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. 

Features:

  • -9.4 A, -60 V, RDS(on) = 0.185 Ω @VGS = -10 V
  • Low gate charge (typical 13nC)
  • Low Crss (typical 45pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply,
  • Motor control
  • Audio amplifier
  • DC-AC converters
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Total
$1,125.00
USD
Quantity
Unit Price
2,500
$0.45
5,000
$0.445
7,500
$0.44
12,500+
$0.43
Product Variant Information section