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onsemi | FQPF3N80C

Manufacturer Part #

FQPF3N80C

FQPF3N80C Series 800 V 3 A 4.8 Ohm N-Channel QFET Mosfet - TO-220F

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FQPF3N80C - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 4.8Ω
Rated Power Dissipation: 39|W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 3A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 22.5ns
Rise Time: 43.5ns
Fall Time: 32ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: DMOS
Height - Max: 16.07mm
Length: 10.36mm
Input Capacitance: 543pF
Package Style:  TO-220F
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$915.00
USD
Quantity
Unit Price
1,000
$0.915
2,000
$0.90
3,000
$0.895
4,000
$0.89
5,000+
$0.875
Product Variant Information section