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Manufacturer Part #

IMZ120R045M1XKSA1

IMZ120 Series 1200V 59mOhm 52 nC N-Channel SiC CoolSiC™ Trench MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2251
Product Specification Section
Infineon IMZ120R045M1XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 59mΩ
Rated Power Dissipation: 228W
Qg Gate Charge: 52nC
Gate-Source Voltage-Max [Vgss]: 3.5V
Drain Current: 52A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 17ns
Rise Time: 24ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 1900pF
Package Style:  TO-247-4
Mounting Method: Flange Mount
Features & Applications

Infineon Technologies has announced that it has begun volume production of discrete 1,200V CoolSiC™ MOSFET devices in a TO247 package, with on-resistance ratings ranging from 30mΩ to 350mΩ.

APPLICATIONS
• Solar inverters
• Battery charging infrastructure
• Energy storage solutions
• Uninterruptible power supplies
• Motor drives
• Data center and telecoms power supplies

FEATURES
• Low device capacitance
• Temperature-independent switching losses
• Integral diode with low reverse-recovery charge
• Threshold-free on-state characteristics

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$239.10
USD
Quantity
Unit Price
30
$7.97
90
$7.91
120
$7.89
300
$7.84
450+
$7.79
Product Variant Information section