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Manufacturer Part #
IPA60R190P6XKSA1
Single N-Channel 600 V 190 mOhm 37 nC CoolMOS™ Power Mosfet - TO-220-3FP
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220FP (TO-220FPAB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Infineon IPA60R190P6XKSA1 - Product Specification
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Subject Product Expansion at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM P6, 600V in PG-TO220-3 Fullpak package.Reason Expansion of assembly and test production to assure continuity of supply and enable flexible manufacturing for additional CoolMOSTM products.Infineon is running mass production of dedicated CoolMOSTM products in TO220-3 Fullpak package since 2016 at Huayi Microelectronics Co., Ltd (HYME).
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPA60R190P6XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/ipa60r190p6xksa1-infineon-8064709
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPA60R190P6XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/ipa60r190p6xksa1-infineon-8064709
Infineon IPA60R190P6XKSA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 190mΩ |
| Rated Power Dissipation: | 34W |
| Qg Gate Charge: | 37nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20.2A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 8ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | CoolMOS |
| Input Capacitance: | 1750pF |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Through Hole